high
selectivity (or non-selectivity) between Cu ,
barrier film and dielectric layer-by customer's
request
Used in IC manufacture
3.Pad
Clean Solution
1.EPL8105
1.
high residual removal ability
2.
low mobile ions
3.
not corrosive to copper film
4.
could
be used as buffer for final polish
Used in IC manufacture
4.BTA
solution
1.
B002
2.
B003
3.
B005
4.
B010
1.
low metal ion impurity
2.
low particle contamination.
3.
effective
Cu corrosion inhibitor.
Used in IC manufacture
5. Reclaim Slurry
1.EPL1313
1.
high
polishing rate for silicon wafer
2.
low
mobile metal ions
3.
low
surface roughness after polish
4.
easy
to clean after polish
EPL1313 should be diluted by D.I. water at a ratio of 20~30 per
volume before use.
6. ILD
slurry
EPL1603
1. high polishing rate for dielectric layer
2. easy to clean after polishing
3. cost low, no scratch, good suspension
Used in IC manufacture
Above
are typical properties obtained according to their standard
respective methods under laboratory conditions, and are
intended only as guidance, not to be constructed as
specifications. For more information please contact
Eternal,or for more detailed specifications: