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CMP Project

Type

Product

Performance

Suggested Uses

1. Cu CMP slurry

  1. EPL2361
  2. EPL2362

1. excellent colloidal stability

2. excellent shelf life and pot life

3. high throughput and low defect count

4. high selectivity between Cu and Ta (or TaN)

5. low dishing and erosion

6. without pits corrosion even on 0.18 um Cu line

1.      Used in IC manufacture

2.   Mixed with hydrogen peroxide before polishing

2. Barrier CMP slurry

1.EPL1421

  1. excellent colloidal stability
  2. excellent shelf life
  3. high throughput and low defect count
  4. high selectivity (or non-selectivity) between Cu , barrier film and dielectric layer-by customer's request

Used in IC manufacture

3.Pad Clean Solution

1.EPL8105

1. high residual removal ability

2. low mobile ions

3. not corrosive to copper film

4. could be used as buffer for final polish

Used in IC manufacture

4.BTA solution

1. B002

2. B003

3. B005

4. B010

1. low metal ion impurity

2. low particle contamination.

3. effective Cu corrosion inhibitor.

Used in IC manufacture

5. Reclaim Slurry

1.EPL1313

1. high polishing rate for silicon wafer

2. low mobile metal ions

3. low surface roughness after polish

4. easy to clean after polish

 

EPL1313 should be diluted by D.I. water at a ratio of 20~30 per volume before use.

6. ILD slurry

      EPL1603

 

1. high polishing rate for dielectric layer

2. easy to clean after polishing

3. cost low, no scratch, good suspension

Used in IC manufacture

 

Above are typical properties obtained according to their standard respective methods under laboratory conditions, and are intended only as guidance, not to be constructed as specifications. For more information please contact Eternal,or for more detailed specifications :  

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Datasheet

MSDS

 

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